- 50V/10A Fully Derated (100V/10A Capable)
- Integrated Output eGaN® Power HEMTs
- Four Possible Configurations:
- Single Low Side Driver
- Single High Side Driver
- Independent High and Low Side Drivers
- Half-Bridge with Input Shoot-Through Protection - Internal Shoot-Through Protection
- Internal Power Good Circuitry
- High Speed Switching Capability: 1.0MHz+
- Rugged Compact Molded SMT Package
- “Pillar” I/O Pads
- eGaN® HEMT Switching Elements
- Rad-Hard/Commercially Screened
- Guaranteed Total Ionizing Dose:
- Rated to 100kRad - Single Event:
- SEE immunity for LET of ~83.7 MeV/mg/cm2
With VDS up to 100% of rated Breakdown - Neutron Fluence:
- Maintains specification up to 1 x 1013 N/cm2
FBS-GAM02-P-R50
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Description:
Freebird Semiconductors FBS-GAM02-P-R50 Series Radiation Hardened Multifunction Power Module incorporates eGaN® switching power HEMTs with intended end use design within commercial satellite space environments. These modules include two output power switches, two high speed gate drive circuits (consisting entirely of eGaN® switching elements), two power Schottky diode clamp elements with shoot-through prevention logic (for the Half-Bridge connection) and a +5V gate drive bias “power good” monitoring circuitry in an innovative, space-efficient, 18 pin SMT molded epoxy package. Data sheet parameters are “Post Radiation Effect” guaranteed due to the utilization of Freebird Semiconductor RHA validated materials.
Commerce Rated 9A515.e.x Device
Applications:
- Power Switches/Actuators
- Single and Multi-Phase Motor Phase Drivers
- Commercial Satellite EPS & Avionics
- High Speed DC-DC Conversion
